Graded barrier AlGaN/GaNheterostructures for high power front end application,Nitride based MOS power devices with insulating heterostructures, Novel InAlN/GaN & AlGaN/GaN heterostructures for resonant tunneling applications,Metamorphic buffer for monolithic integration of compound semiconductor RF devices on Silicon, Nonvolatile memory devices based on metal/insulator/compound semiconductor heterostructures,Gallium Nitride based high power RF switches for advanced multi-band front end applicati
Personal Information
Prof Dhrubes Biswas
Male
Department of Electronics and Electrical Communication Engg., IIT KharagpurKharagpur, West Bengal, - 721302
Experience
Professor
Department of Electronics and Electrical Communication Engineering
Indian Institute of Technology Kharagpur
Qualification
Ph.D
Illinois USA)
Patents
DOUBLE QUANTUM WELL NITRIDE HIGH ELECTRON MOBILITY TRANSISTOR (HEMT)
BAG Ankush | DAS Palash | KUMAR Rahul | MUKHOPADHYAY Partha | BISWAS Dhrubes
Patent No. IN201500277I2
Published
Filed 2015-03-13
Published 2015-07-10
DOUBLE QUANTUM WELL NITRIDE HIGH ELECTRON MOBILITY TRANSISTOR (HEMT)
BAG Ankush | DAS Palash | KUMAR Rahul | MUKHOPADHYAY Partha | BISWAS Dhrubes
INDIAN INSTITUTE OF TECHNOLOGY KHARAGPUR | INDIAN INSTITUTE OF TECHNOLOGY KHARAGPUR